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Abhay Joshi, Xinde Wang, Donald Becker & Daniel Mohr
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, New Jersey, 08628, USAABSTRACT
We have fabricated a monolithic Opto-electronic Integrated Circuit (OEIC) comprising of an InGaAs PIN photodetector and a Common Gate Amplifier (CGA) using Metamorphic High Electron Mobility Transistors (MHEMTs) on 4 inch GaAs substrates. The OEIC shows a gain of 28 dB at 28 GHz with an 8 GHz FWHM.
* Paper presented at Microwave Photonoics Conference, Awaji, Japan 2002.
