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Ewing, NJ - July, 2013
Discovery Semiconductors introduces a general purpose Wideband RF Amplifier from 30 kHz to 45 GHz. An optional integrated bias tee is available for setting and controlling the bias current operating point of 25G/40G VCSEL transmitters. Additional applications include BER and Impulse Response measurements.
Discovery’s small footprint, easy-to-use, RF amplifier gain block is powered from a single regulated internal +5V DC supply. The amplifier has low power dissipation thus no heat sink is required. Furthermore, it may be powered from a +9V DC battery for up to 10 hours.
Discovery Semiconductors’ Wideband RF Amplifier boasts an impressive low frequency cutoff of 30 kHz which makes it suitable for recovery of low frequency Fourier components of impulse signals and digital communications alike.
Additionally, the key features include:
- Low Power Dissipation
- Small Physical Size
- Low Group Delay
See Related Products: Wideband RF Amplifier from 30 kHz to 45 GHz
Discovery Semiconductors is an industry leader in manufacturing ultrafast, high optical power handling InGaAs photodiodes, radio frequency over fiber optical receivers, balanced optical receivers and several other custom products for applications ranging from analog RF links to ultrafast digital communications.
For additional information, including complete product specifications, operational capabilities and pricing, or to discuss your application in detail, please call Discovery at: (609) 434-1311 or fax: (609) 434-1317.
